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PE8306H

    PE8306H是VDS=30V,ID=6A,RDS(ON)<26mΩ@VGS=10V,RDS(ON)<40mΩ@VGS=4.5V的N沟道MOSFET。

    PE8306H的丝印是8306H。PE8306H提供SOT-23-3L封装。

    The PE8306H uses advanced trench technology to provide excellent RDS(ON) and low gate charge. It can be used in a wide variety of applications.
    PE8306H概述:
        PE8306H是VDS=30V,ID=6A,RDS(ON)<26mΩ@VGS=10V,RDS(ON)<40mΩ@VGS=4.5V的N沟道MOSFET。
        PE8306H的丝印是8306H。PE8306H提供SOT-23-3L封装。
        The PE8306H uses advanced trench technology to provide excellent RDS(ON) and low gate charge. It can be used in a wide variety of applications.

    PE8306H特性:
    VDS = 30V, ID = 6A 
    RDS(ON) < 26mΩ @ VGS=10V 
    RDS(ON) < 40mΩ @ VGS=4.5V 
    High Power and current handing capability 
    Lead free product is acquired 
    Surface Mount Package

    PE8306H应用:
    PWM applications 
    Load switch 
    Power management

    PE8306H典型应用及引脚:

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