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PE8325DM是VDS=30V，ID=14A，RDS(ON)<10mΩ@VGS=10V，RDS(ON)<17mΩ@VGS=4.5V的N沟道MOSFET。

PE8325DM的丝印是PE8325DM，PE8325DM提供PDFN3.3x3.3-8L封装。

The PE8325DM uses advanced trench technology to provide excellent RDS(ON) and low gate charge. It can be used in a wide variety of applications.

PE8325DM概述：

PE8325DM是VDS=30V，ID=14A，RDS(ON)<10mΩ@VGS=10V，RDS(ON)<17mΩ@VGS=4.5V的N沟道MOSFET。
PE8325DM的丝印是PE8325DM，PE8325DM提供PDFN3.3x3.3-8L封装。

The PE8325DM uses advanced trench technology to provide excellent RDS(ON) and low gate charge. It can be used in a wide variety of applications.

PE8325DM特性：

VDS=30V，ID=14A

RDS(ON)<10mΩ@VGS=10V

RDS(ON)<17mΩ@VGS=4.5V

High Power and current handing capability

Lead free product is acquired

Surface Mount Package

PE8325DM应用：

PWM applications

Load switch

Power management

PE8325DM典型应用及引脚：