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单P-MOS

PE3117C SOT23-3L

    PE3117C是VDS=-30V,ID=-7A,RDS(ON)<22mΩ,@VGS=-10V,RDS(ON)<32mΩ,@VGS=-4.5V的P-Channel Enhancement Mode Power MOSFET.
    PE3117C的丝印是3117C.PE3117C提供SOT-23-3L封装. 
   The PE3117C uses advanced trench technology to provide excellent RDS(ON) and low gate charge. It can be used in a wide variety of applications. It is ESD protected.
    PE3117C概述:
        PE3117C是VDS=-30V,ID=-7A,RDS(ON)<22mΩ,@VGS=-10V,RDS(ON)<32mΩ,@VGS=-4.5V的P-Channel Enhancement Mode Power MOSFET.
        PE3117C的丝印是3117C.PE3117C提供SOT-23-3L封装.
        The PE3117C uses advanced trench technology to provide excellent RDS(ON) and low gate charge. It can be used in a wide variety of applications. It is ESD protected.

    PE3117C特性:
    VDS = -30V, ID = -7A
    RDS(ON) < 22mΩ @ VGS=-10V
    RDS(ON) < 32mΩ @VGS=-4.5V
    ESD Rating: ≥4000V HBM
    High Power and current handing capability
    Lead free product is acquired
    Surface Mount Package

    PE3117C应用:
    PWM applications
    Load switch
    Power management

    PE3117C典型应用及引脚:

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