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PE7165G DFN5x6-8L

    PE7165G是VDS=-18V,ID=-65A,RDS(ON)<4mΩ,@VGS=-4.5V,RDS(ON)<5.6mΩ,@VGS=-2.5V的P-Channel Enhancement Mode Power MOSFET.
    PE7165G的丝印是PE7165G.PE7165G提供DFN5x6-8L封装.
    The PE7165G uses advanced trench technology to provide excellent RDS(ON) and low gate charge. It can be used in a wide variety of applications.
    PE7165G概述:
        PE7165G是VDS=-18V,ID=-65A,RDS(ON)<4mΩ,@VGS=-4.5V,RDS(ON)<5.6mΩ,@VGS=-2.5V的P-Channel Enhancement Mode Power MOSFET.
        PE7165G的丝印是PE7165G.PE7165G提供DFN5x6-8L封装.
        The PE7165G uses advanced trench technology to provide excellent RDS(ON) and low gate charge. It can be used in a wide variety of applications.

    PE7165G特性:
    VDS = -18V, ID = -65A
    RDS(ON) < 4mΩ @ VGS=-4.5V
    RDS(ON) < 5.6mΩ @VGS=-2.5V
    High Power and current handing capability
    Lead free product is acquired
    Surface Mount Package

    PE7165G应用:
    PWM applications
    Load switch
    Power management

    PE7165G典型应用及引脚:

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