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MXND805 DFN2x2-6L

    MXND805是VDS=-12V,ID=-8.5A,@VGS=-4.5V,RDS(ON)(Typ.)=14m?,@VGS=-2.5V,RDS(ON)(Typ.)=19m?,@VGS=-1.8V,RDS(ON)(Typ.)=29m?的P-Channel MOSFET.
    MXND805提供DFN2x2-6L封装.
    The MXND805 uses advanced trench technology to provideexcellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V.
    This device is suitable for use as aload switching applications and a wide variety of other applications.

    MXND805概述:
        MXND805是VDS=-12V,ID=-8.5A,@VGS=-4.5V,RDS(ON)(Typ.)=14m?,@VGS=-2.5V,RDS(ON)(Typ.)=19m?,@VGS=-1.8V,RDS(ON)(Typ.)=29m?的P-Channel MOSFET.MXND805提供DFN2x2-6L封装.
        The MXND805 uses advanced trench technology to provideexcellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as aload switching applications and a wide variety of other applications.

    MXND805特性:

    VDS =-12V,ID =-8.5A
    @VGS=-4.5V RDS(ON)(Typ.)=14m?
    @VGS=-2.5V RDS(ON)(Typ.)=19m?
    @VGS=-1.8V RDS(ON)(Typ.)=29m?
    Asvanced trench MOSFET process technology
    Ultra low on-resistance with low gate charge
    New Thermally Enhanced DFN2X2-6L Package

    MXND805应用:

    PWM applications
    Load switch
    battery charge in cellular handset

    MXND805典型应用及引脚图:


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