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MXN6545 DFN5*6-8L

    MXN6545是VDS=-30V,ID=-50A,RDS(ON)(Typ.)=4.4m?,@VGS=-10V的P-Channel MOSFET.
    MXN6545提供DFN5*6-8L封装.
    The MXN6545 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge.
    It can be Used in a wide variety of applications.

    MXN6545概述:
        MXN6545是VDS=-30V,ID=-50A,RDS(ON)(Typ.)=4.4m?,@VGS=-10V的P-Channel MOSFET.MXN6545提供DFN5*6-8L封装.
        The MXN6545 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be Used in a wide variety of applications.

    MXN6545特性:

    VDS =-30V,ID =-50A
    RDS(ON) (Typ.)= 4.4m ? @ VGS=-10V

    High density cell design for ultra low Rdson
    Fully characterized avalanche voltage and current
    Good stability and uniformity with high EAS
    Excellent package for good heat dissipation
    Special process technology for high ESD capability

    MXN6545应用:

    Battery and loading switching

    MXN6545典型应用及引脚图:


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