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单P-MOS

MXD60P02 TO252-3L

    MXD60P02是VDS=-20V,ID=-60A,RDS(ON)(Typ.)=11mΩ@VGS=-2.5V,RDS(ON)(Typ.)=8mΩ@VGS=-4.5V的P沟道MOSFET.
    The MXD60P02 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as -2.5V. This device is suitable for use as a Battery protection or in other Switching application.
    MXD60P02概述:
        MXD60P02是VDS=-20V,ID=-60A,RDS(ON)(Typ.)=11mΩ@VGS=-2.5V,RDS(ON)(Typ.)=8mΩ@VGS=-4.5V的P沟道MOSFET.
        The MXD60P02 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as -2.5V. This device is suitable for use as a Battery protection or in other Switching application.

    MXD60P02特性:
    VDS=-20V,ID=-60A
    RDS(ON)(Typ.)=11mΩ@VGS=-2.5V 
    RDS(ON)(Typ.)=8mΩ@VGS=-4.5V

    MXD60P02应用:
    Battery protection
    Load switch
    Uninterruptible power supply

    MXD60P02订购信息:
    Part Number
    StorageTemperature
    Package
    Devices Per Reel
    MXD60P02

    -55°C to 150°C

    TO-252-3L
    2500

    MXD60P02典型应用及引脚配置:
    请提交您的基本信息,发邮件Sales@ChipSourceTek.com,或者打电话给我们,13823761625(微信同号),我们将会尽快与您联系!

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