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单P-MOS

CST30P03D PDFN3333-8L

    CST30P03D是BVDSS=-30V,RDSON=15mΩ,ID=-30A的P-Mosfets.提供PDFN3333-8L封装。
    The CST30P03D is the high cell density trenched P-ch MOSFETs, which provide excellent RDSON and gate charge for most of the synchronous buck converter applications.
    TheCST30P03D meet the RoHS and Gree Product requirement 100% EAS guaranteed with full function reliability approved.
    CST30P03D Description/描述:
        CST30P03D是BVDSS=-30V,RDSON=15mΩ,ID=-30A的快速切换Mosfets.提供PDFN3333-8L封装。
        The CST30P03D is the high cell density trenched P-ch MOSFETs, which provide excellent RDSON and gate charge for most of the synchronous buck converter applications.
        TheCST30P03D meet the RoHS and Gree Product requirement 100% EAS guaranteed with full function reliability approved.

    CST30P03D Features/特性:
    100% EAS Guaranteed
    Green Device Available
    Super Low Gate Charge
    Excellent CdV/dt effect decline
    Advanced high cell density Trench technology

    CST30P03D Product Summary/产品概览:
    BVDSS
    RDSON
    ID

    -30V

    15mΩ

    -30A


    CST30P03D Pin Configuration/引脚配置:

    CST30P03D Test Circuit/测试电路:


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