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单P-MOS

CST2301D-S50

    CST2301D-S50是VDS=-20V,ID=-3A,RDS(ON)=95mΩ@VDS=-4.5V,RDS(ON)=110mΩ@VDS=-2.5V的P沟道MOSFET.

    The CST2301D-S50 is the high cell density trenched P-ch MOSFETs, which provides excellent RDSON and efficiency for most of the small power switching and load switch applications.

    The CST2301D-S50 meet the RoHS and Green Product requirement with full function reliability approved.
    CST2301D-S50概述:
        CST2301D-S50是VDS=-20V,ID=-3A,RDS(ON)=95mΩ@VDS=-4.5V,RDS(ON)=110mΩ@VDS=-2.5V的P沟道MOSFET.
        The CST2301D-S50 is the high cell density trenched P-ch MOSFETs, which provides excellent RDSON and efficiency for most of the small power switching and load switch applications.
        The CST2301D-S50 meet the RoHS and Green Product requirement with full function reliability approved.
    CST2301D-S50特性:
    VDS=-20V,ID=-3A
    RDS(ON)=95mΩ@VDS=-4.5V
    RDS(ON)=110mΩ@VDS=-2.5V
    Green Device Available 
    Super Low Gate Charge
    Excellent Cdv/dt effect decline
    Advanced high cell density Trench technology
    CST2301D-S50封装图:
    请提交您的基本信息,我们将会尽快与您联系!

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