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单P-MOS

HYG400P10LR1P/B

    HYG400P10LR1P/B是VDS=-100V,ID=-40A,RDS(ON)=42mΩ(typ.)@VGS=-10V,RDS(ON)=48mΩ(typ.)@VGS=-4.5V的P沟道MOSFET.

    HYG400P10LR1P/B提供TO-220FB-3L/TO-263-2L封装.

    HYG400P10LR1P/B概述:
        HYG400P10LR1P/B是VDS=-100V,ID=-40A,RDS(ON)=42mΩ(typ.)@VGS=-10V,RDS(ON)=48mΩ(typ.)@VGS=-4.5V的P沟道MOSFET.
        HYG400P10LR1P/B提供TO-220FB-3L/TO-263-2L封装.

    HYG400P10LR1P/B特性:
    -100V/-40A
    RDS(ON)= 42mΩ(typ.) @ VGS = -10V
    RDS(ON)= 48mΩ(typ.) @ VGS = -4.5V
    100% Avalanche Tested
    Reliable and Rugged
    Lead Free and Green Devices Available (RoHS Compliant)

    HYG400P10LR1P/B应用:
    Portable equipment and battery powered systems
    DC-DC Converters
    Motor control.

    HYG400P10LR1P/B典型应用电路与封装图:

    请提交您的基本信息,我们将会尽快与您联系!

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