CST4G03 Description:
    CST4G03是N:VDS=30V,REDSON=29mΩ,ID=4A;P:VDS=-30V,REDSON=55mΩ,ID=-4A的N+P双沟道Mosfet,封装是SOT23-6。
The CST4G03 is the highest performance trench N-ch and P-ch MOSFETs with extreme high cell density ,which provide excellent RDSON and gate charge for most of the synchronous buck converter applications .
The CST4G03 is the highest performance trench N-ch and P-ch MOSFETs with extreme high cell density ,which provide excellent RDSON and gate charge for most of the synchronous buck converter applications .
    The CST4G03 meet the RoHS and Green Product requirement , 100% EAS guaranteed with full function reliability approved.
CST4G03 Features:
Advanced high cell density Trenchtechnology
Super Low Gate Charge
Excellent CdV/dt effect decline
Green Device Available
CST4G03 Applications:
Power management in half bridge and inverters
DC-DC Converter
Load Switch
CST4G03 Product Summary:
| BVDSS | RDSON | ID | 
| 30V | 29mΩ | 4A | 
| -30V | 55mΩ | -4A | 
CST4G03 SOT23-6L Pin Configuration:

 
		












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