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PE8310DS是VDS=30V，ID=10A，RDS(ON)<11mΩ@VGS=10V，RDS(ON)<16mΩ@VGS=4.5V的N沟道MOSFET。
PE8310DS的丝印是PE8310DS。PE8310DS提供SOP-8封装。

The PE8310DS uses advanced trench technology to provide excellent RDS(ON) and low gate charge. It can be used in a wide variety of applications.

PE8310DS概述：

PE8310DS是VDS=30V，ID=10A，RDS(ON)<11mΩ@VGS=10V，RDS(ON)<16mΩ@VGS=4.5V的N沟道MOSFET。
PE8310DS的丝印是PE8310DS。PE8310DS提供SOP-8封装。

The PE8310DS uses advanced trench technology to provide excellent RDS(ON) and low gate charge. It can be used in a wide variety of applications.

PE8310DS特性：

VDS = 30V, ID = 10A

RDS(ON) < 11mΩ @ VGS=10V

RDS(ON) < 16mΩ @VGS=4.5V

High Power and current handingcapability

Lead free product is acquired

Surface Mount Package

PE8310DS应用：

PWM applications

Load switch

Power management

Battery Protection

PE8310DS典型应用及引脚：