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MXD30N100 TO252-2L

    MXD30N100是VDS=30V,ID=100A,RDS(ON)(Typ.)4mΩ,@Vgs=10V,RDS(ON)(Typ.)7mΩ,@Vgs=4.5V的N沟道MOSFET.
    MXD30N100提供TO-252-2L封装.
    The MXD30N100 uses advanced trench technology and design to provide excellent RDS(ON), with low gate charge .
    It can be used in a wide variety of applications.

    MXD30N100概述:
        MXD30N100是VDS=30V,ID=100A,RDS(ON)(Typ.)4mΩ,@Vgs=10V,RDS(ON)(Typ.)7mΩ,@Vgs=4.5V的N沟道MOSFET.MXD30N100提供TO-252-2L封装.
        The MXD30N100 uses advanced trench technology and design to provide excellent RDS(ON), with low gate charge .It can be used in a wide variety of applications.

    MXD30N100特性:

    VDS =30V,ID =100A
    RDS(ON)(Typ.)4mΩ @ Vgs=10V
    RDS(ON)(Typ.)7mΩ @ Vgs=4.5V
    High density cell design for ultra low Rdson
    Fully characterized avalanche voltage and current
    Good stability and uniformity with high EAS
    Excellent package for good heat dissipation
    Special process technology for high ESD capability

    MXD30N100应用:

    Power switching application
    Hard switched and high frequency circuits
    Uninterruptible power supply

    MXD30N100典型应用及引脚图:

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