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单N-MOS

MXD6888 TO-252-2L

    MXD6888是60V,80A的,N沟道增强型功率MOSFET,
    MXD6888丝印:6888,MXD6888提供TO-252-2L封装
    The MXD6888 is N-channel MOS Field Effect Transistor designed for high current switching applications. Rugged EAS capability and ultra low RDS(ON) is suitable for PWM, load switching especially for E-Bike controller applications.
    MXD6888概述:
         MXD6888是60V,80A的,N沟道增强型功率MOSFET,
         MXD6888丝印:6888,MXD6888提供TO-252-2L封装
         The MXD6888 is N-channel MOS Field Effect Transistor designed for high current switching applications. Rugged EAS capability and ultra low RDS(ON) is suitable for PWM, load switching especially for E-Bike controller applications.
         
    MXD6888特性:
    VDS=60V, ID=80A
    RDS(ON)(Typ.)=6.8mΩ @ VGS=10V
    Special Designed for E-Bike Controller Application
    Ultra Low On-Resistance
    High h UIS and UIS 100% Test
    MXD6888丝印:6888
    MXD6888提供TO-252-2L封装

    MXD6888应用:
    Power Switching Application
    Hard Switched and High Frequency Circuits
    Uninterruptible Power Supply

    MXD6888典型应用电路图:

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