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单N-MOS

HYG053N10NS1C2 PDFN5*-8L

HYG053N10NS1C2 PDFN5*-8L   100V/95A 
RDS(ON)=4.6mΩ(typ.)@VGS = 10V
100% Avalanche Tested
Reliable and Rugged
Halogen-Free Devices Available (RoHS Compliant)
    HYG053N10NS1C2 Description:
        HYG053N10NS1C2 PDFN5*-8L,HYG053N10NS1C2是VDS=100V,ID=95A,RDS(ON)=4.6mΩ(typ.)@VGS=10V的N沟道MOS管.

    HYG053N10NS1C2 Feature:
    100V/95A
    RDS(ON)=4.6mΩ(typ.)@VGS = 10V
    100% Avalanche Tested
    Reliable and Rugged
    Halogen-Free Devices Available (RoHS Compliant)

    HYG053N10NS1C2 Applications:
    Switching application
    Power management for inverter systems
    Battery management

    HYG053N10NS1C2 Pin Description:
    请提交您的基本信息,发邮件Sales@ChipSourceTek.com,或者打电话给我们,13823761625(微信同号),我们将会尽快与您联系!

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