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单N-MOS

PE8330M PDFN3.3x3.3-8L

    PE8330M是VDS=30V,ID=30A,RDS(ON)<11mΩ@VGS=10V,RDS(ON)<18mΩ@VGS=4.5V的N沟道MOSFET。
    PE8330M的丝印是PE8330M,PE8330M提供PDFN3.3x3.3-8L封装。
    The PE8330M uses advanced trench technology to provide excellent RDS(ON) and low gate charge. It can be used in a wide variety of applications.
    PE8330M概述:
        PE8330M是VDS=30V,ID=30A,RDS(ON)<11mΩ@VGS=10V,RDS(ON)<18mΩ@VGS=4.5V的N沟道MOSFET。
        PE8330M的丝印是PE8330M,PE8330M提供PDFN3.3x3.3-8L封装。
        The PE8330M uses advanced trench technology to provide excellent RDS(ON) and low gate charge. It can be used in a wide variety of applications.

    PE8330M特性:
    VDS = 30V, ID = 30A
    RDS(ON) < 11mΩ @ VGS=10V
    RDS(ON) < 18mΩ @VGS=4.5V
    High Power and current handing capability 
    Lead free product is acquired 
    Surface Mount Package

    PE8330M应用:
    PWM applications
    Load switch

    PE8330M典型应用及引脚:

    请提交您的基本信息,发邮件Sales@ChipSourceTek.com,或者打电话给我们,13823761625(微信同号),我们将会尽快与您联系!

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