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双N-MOS

PE8205 SOT23-6L

    PE8205是VDS=20V,ID=6A,RDS(ON)<26mΩ,@VGS=4.5V,RDS(ON)<28mΩ,@VGS=3.8V,RDS(ON)<36mΩ,@VGS=2.5V的N-Channel Enhancement Mode Power MOSFET.
    PE8205的丝印是8205.PE8205提供SOT-23-6L封装.
    The PE8205 uses advanced trench technology to provide excellent RDS(ON) and low gate charge. It can be used in a wide variety of applications.

    PE8205概述:
        PE8205是VDS=20V,ID=6A,RDS(ON)<26mΩ,@VGS=4.5V,RDS(ON)<28mΩ,@VGS=3.8V,RDS(ON)<36mΩ,@VGS=2.5V的N-Channel Enhancement Mode Power MOSFET.
        PE8205的丝印是8205.PE8205提供SOT-23-6L封装.
        The PE8205 uses advanced trench technology to provide excellent RDS(ON) and low gate charge. It can be used in a wide variety of applications.

    PE8205特性:
    VDS = 20V, ID = 6A
    RDS(ON) < 26mΩ @ VGS=4.5V
    RDS(ON) < 28mΩ @VGS=3.8V
    RDS(ON) < 36mΩ @VGS=2.5V
    High Power and current handing capability
    Lead free product is acquired
    Surface Mount Package

    PE8205应用:
    Battery Protection
    Load switch

    PE8205典型应用及引脚:

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