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双N-MOS

CST8205As

    CST8205As是20V4A的N沟MOSFET,RDS(ON) < 357mΩ @ VGS=2.5V RDS(ON) < 25mΩ @ VGS=4.5V,丝印CST8205AS。CST8205AT提供SOT23-6封装

    The CST8205AS uses advanced trench technology to provide excellent RDS(ON) , low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a Battery  protection or in other Switching application.
    CST8205AS概述:
        CST8205As是20V4A的N沟MOSFET,RDS(ON) < 357mΩ @ VGS=2.5V RDS(ON) < 25mΩ @ VGS=4.5V,丝印CST8205AS。CST8205AT提供SOT23-6封装
        The CST8205AS uses advanced trench technology to provide excellent RDS(ON) , low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a Battery  protection or in other Switching application.

    CST8205AS
    特性:
    VDS=20V,ID=4A
    RDS(ON) <35mΩ@VGS =2.5V
    RDS(ON) <25mΩ@VGS =4.5V
    High Power and current handing capability 
    Lead free product is acquired
    Surface Mount Package
    High Power and current handing capability
    Lead free product is acquired
    Surface Mount Package

    CST8205AS应用:

    Battery protection
    Load switch
    Power management

    CST8205AS
    典型应用电路图:

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