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双N-MOS

MX8205AH

    MX8205AH是VDS=20V,ID=6A,RDS(ON)(Typ.)=22mΩ,@VGS=4.5V,RDS(ON)(Typ.)=27mΩ,@VGS=2.5V的N-Channel MOSFET.
    MX8205AH提供SOT23-6封装.

    MX8205AH概述:
        MX8205AH是VDS=20V,ID=6A,RDS(ON)(Typ.)=22mΩ,@VGS=4.5V,RDS(ON)(Typ.)=27mΩ,@VGS=2.5V的N-Channel MOSFET.MX8205AH提供SOT23-6封装.
        The MX8205AH uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a Battery protection or in other Switching applications.

    MX8205AH特性:

    VDS = 20V,ID =6A
    RDS(ON) (Typ.) =22mΩ @ VGS=4.5V
    RDS(ON)(Typ.) =27mΩ @ VGS=2.5V
    High Power and current handing capability
    Lead free product is acquired
    Surface Mount Package

    MX8205AH应用:

    Battery protection
    Load switch
    Power management

    MX8205AH典型应用及引脚图:

    请提交您的基本信息,发邮件Sales@ChipSourceTek.com,或者打电话给我们,13823761625(微信同号),我们将会尽快与您联系!

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